Infineon Technologies AGBSB165N15NZ3GXUMA1MOSFETs
BSB165N15NZ3GXUMA1 Infineon Technologies AG Transistors MOSFETs N-CH 150V 9A Automotive 7-Pin WDSON T/R - arrowelectronics.com.au
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | Unknown |
| PPAP | Unknown |
| Power MOSFET | |
| Single Dual Drain Dual Source | |
| OptiMOS | |
| Enhancement | |
| N | |
| 1 | |
| 150 | |
| 20 | |
| 150 | |
| 9 | |
| 16.5@10V | |
| 26@10V | |
| 26 | |
| 2100@75V | |
| 2800 | |
| 7 | |
| 10 | |
| 17 | |
| 10 | |
| -40 | |
| 150 | |
| Tape and Reel | |
| 9 (Ta)|45 (Tc) | |
| 8|10 | |
| Mounting | Surface Mount |
| Package Height | 0.52 |
| Package Width | 4.93 |
| Package Length | 5.5 |
| PCB changed | 7 |
| Standard Package Name | SON |
| Supplier Package | WDSON |
| 7 | |
| Lead Shape | No Lead |
Use Infineon Technologies' BSB165N15NZ3GXUMA1 power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 2800 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This device utilizes optimos technology. This MOSFET transistor has an operating temperature range of -40 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
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